f e a t ures low cost low leakage low forward voltage drop high current capability mechanical data cas e:jedec do-27,m olded plas tic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.041 ounces,1.15 grams mounting pos ition: any maximum ratings and electrical characteristics ratings at ?b ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. 5a 200 5a 400 5a 600 5a 800 5a 1000 units maximum recurrent peak reverse voltage v rrm 200 400 600 800 1000 v max imum rms v oltage v rms 140 280 420 560 700 v maximum dc blocking voltage v dc 200 400 600 800 1000 v maximum average forw ard rectif ied current 9.5mm lead length, @t a =75 peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ 5.0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 typical junction capacitance (note1) c j pf typical thermal resistance (note2) r ja /w operating junction temperature range t j storage temperature range t stg 100 70 voltage range: 50 --- 1000 v current: 5.0 a 35 50 do - 2 7 diffus ed junction easily cleaned witn freon,alcohol,lsopropanol 5a 50 5a 100 - 55 ---- + 150 - 55 ---- + 150 i r 80 5A50 - - - 5a1000 a 10.0 and s im ilar s olvents i f(av) 5.0 p l a s t i c s i l i c o n r e c t i f i e r s the plastic material carries u/l recognition 94v-0 a 2. thermal resistance f rom junction to ambient. a 50 100 1.2 15 100.0 300.0 i fsm note: 1. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. dimensions in millimeters diode semiconductor korea www.diode.kr
1 0 100 200 300 4 0 0 20 t j =125 ?? 8.3ms single half sine-wave 24 10 81 0 0 40 60 80 .2 10 .1 .4 1 .0 2 100 200 4 10 20 40 100 f=1mhz t j =25 0 . 01 0 . 02 0 . 06 0 . 04 100 0 . 4 1 . 2 t j =25 pulse width=300us 0 . 80 . 6 1 . 0 0 . 1 0 . 2 1 . 61 . 4 1 . 0 2 4 10 0 1 2 3 4 0 25 50 75 100 125 150 single phase half w ave 60h z resistive or inductive load 175 5 6 7 8 amperes instantaneous forward current amperes amperes capacitance, pf fig.3 -- maximum non-repetitire forward fi g. 4 -- typi cal juncti on capaci tance reverse voltage, volts surge curren t 5A50 - - - 5a1000 ambient temperature, instantaneous forward voltage, volts number of cycles at 60hz fi g. 1 -- forward derati ng curve fi g. 2 -- typi cal forward characteri sti cs peak forward surge current average forward rectified current www.diode.kr diode semiconductor korea
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